III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm
نویسندگان
چکیده
We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO 2 /Si substrate lasing in waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. study the emission characteristics of In 0.13 Ga 0.87 As/GaAs 0.94 P 0.06 lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits at 1 thresholds low 211 mW were recorded. Control over position size spots pump was demonstrated.
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ژورنال
عنوان ژورنال: Epj Web of Conferences
سال: 2022
ISSN: ['2101-6275', '2100-014X']
DOI: https://doi.org/10.1051/epjconf/202226601011